Specification	NTGS3441BT1G

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

NTGS3447P Series

Power MOSFET 20V 2.35A 90 mOhm Single P-Channel TSOP-6

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
ON Semiconductor NTGS3455T1	2.5 A	500 mW	P-Channel	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	13 nC	Surface Mount	480 pF	30 V	3 V	6-TSOP	-55 °C	150 °C
ON Semiconductor NTGS3441BT1G	2.2 A		P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	8 V		Surface Mount		20 V	900 mV	6-TSOP	-55 °C	150 °C	630 pF	700 mW	90 mOhm	9 nC
ON Semiconductor NTGS3441T1	1.65 A	500 mW	P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	8 V	14 nC	Surface Mount	480 pF	20 V	1.5 V	6-TSOP	-55 °C	150 °C					90 mOhm
ON Semiconductor NTGS3443T2G	2.2 A	500 mW	P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	12 V		Surface Mount		20 V	1.5 V	6-TSOP	-55 °C	150 °C	565 pF			15 nC	65 mOhm
ON Semiconductor NTGS3443BT1G	2.7 A		P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	12 V		Surface Mount		20 V	1.4 V	6-TSOP	-55 °C	150 °C	819 pF	700 mW	60 mOhm	11 nC
ON Semiconductor NTGS3447PT1G	3.4 A		P-Channel	SOT-23-6 Thin TSOT-23-6	1.8 V 4.5 V	MOSFET (Metal Oxide)	8 V		Surface Mount		12 V	1 V	6-TSOP	-55 °C	150 °C	1053 pF	700 mW		15 nC	40 mOhm
ON Semiconductor NTGS3433T1
ON Semiconductor NTGS3443T1	2.2 A	500 mW	P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	12 V		Surface Mount		20 V	1.5 V	6-TSOP	-55 °C	150 °C	565 pF			15 nC	65 mOhm
ON Semiconductor NTGS3441PT1G	1.8 A		P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	12 V	6 nC	Surface Mount		20 V	1.6 V	6-TSOP	-55 °C	150 °C	345 pF	510 mW
ON Semiconductor NTGS3443T1G	2.2 A	500 mW	P-Channel	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	MOSFET (Metal Oxide)	12 V		Surface Mount		20 V	1.5 V	6-TSOP	-55 °C	150 °C	565 pF			15 nC	65 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTGS3447P Series

Power MOSFET -20V -4.4A 65 mOhm Single P-Channel TSOP-6

Documents

Technical documentation and resources

Package Drawing-318G-02-TSOP-6 3.00x1.50x0.90, 0.95P

Package Drawing