Discrete Semiconductor Products

80EPF06

Obsolete

DIODE GEN PURP 600V 80A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	80EPF06

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	190 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division 80EPF06	TO-247AC	100 µA	Standard	Through Hole	TO-247-3	600 V	80 A	190 ns	175 ░C	-65 C	200 mA 500 ns	1.25 V
Vishay General Semiconductor - Diodes Division VS-80EPF06PBF	TO-247AC	100 µA	Standard	Through Hole	TO-247-3	600 V	80 A	190 ns	150 °C	-40 °C	200 mA 500 ns	1.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.75

General part information

Diode 600 V 80A Through Hole TO-247AC

Technical documentation and resources