Specification	SSM6K516NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-12 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K516NU Series

Part	Operating Temperature	Vgs (Max) [Min]	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology
Toshiba Semiconductor and Storage SSM6K516NU,LF	150 °C	-12 V	20 V	2.5 nC	6 A	46 mOhm	N-Channel	30 V	280 pF	Surface Mount	2.5 V	1.25 W	6-UDFNB (2x2)	4.5 V 10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)

Technical documentation and resources