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Technical Specifications
Parameters and characteristics for this part
| Specification | RFN3BM2STL |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 10 ÁA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-252 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 980 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.41 | |
Description
General part information
RFN3BM2S Series
RFN3BM2S is the silicon epitaxial planar type Fast Recovery Diode.
Documents
Technical documentation and resources