Discrete Semiconductor Products

PSMN041-80YLX

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MOSFET N-CH 80V 25A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 80V 25A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN041-80YLX

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1108 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	64 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PSMN041-80YLX	Surface Mount	2.1 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	21.9 nC	10 V	5 V	80 V	-55 °C	175 ░C	64 W	1108 pF	N-Channel	SC-100 SOT-669	20 V	25 A	41 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources