Specification	AFGHL25T120RWD

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	75 A
Gate Charge	113 nC
Grade	Automotive
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	468 W
Qualification	AEC-Q101
Supplier Device Package	TO-247-3
Switching Energy	1.57 mJ, 1.06 mJ
Td (on/off) @ 25°C	36.9 ns
Td (on/off) @ 25°C	175 ns
Test Condition	4.7 Ohm, 600 V, 15 V, 25 A
Vce(on) (Max) @ Vge, Ic	1.71 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

AFGHL25T120RWD Series

IGBT - Automotive Grade 1200 V 25 A

Part	Power - Max [Max]	Qualification	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Current - Collector Pulsed (Icm)	IGBT Type	Current - Collector (Ic) (Max)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	Grade	Switching Energy
ON Semiconductor AFGHL25T120RWD	468 W	AEC-Q101	1.71 V	-55 °C	175 ░C	113 nC	75 A	Trench Field Stop	50 A	Through Hole	1200 V	TO-247-3	4.7 Ohm 15 V 25 A 600 V	36.9 ns	175 ns	TO-247-3	Automotive	1.06 mJ 1.57 mJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.15
		10	$ 6.26
		100	$ 4.63
		500	$ 4.06
ON Semiconductor	N/A	1	$ 4.33

Description

General part information

AFGHL25T120RWD Series

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.