Discrete Semiconductor Products

R5016ANX

NRND

MOSFET N-CH 500V 16A TO220FM

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Discrete Semiconductor Products

NRND

MOSFET N-CH 500V 16A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	R5016ANX

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	77 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature
Rohm Semiconductor R5016ANX	MOSFET (Metal Oxide)	16 A	N-Channel	30 V	4.5 V	Through Hole	TO-220FM	500 V	1800 pF	10 V	TO-220-3 Full Pack	270 mOhm	50 nC	77 W	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	500	$ 3.49

General part information

N-Channel 500 V 16A (Tc) 77W (Tc) Through Hole TO-220FM

Technical documentation and resources

No documents available