Discrete Semiconductor Products

RFS30TZ6SGC13

NRND

RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 30A, 650V V(RRM), SILICON, TO-247, TO-247GE, 2 PIN

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Discrete Semiconductor Products

NRND

RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 30A, 650V V(RRM), SILICON, TO-247, TO-247GE, 2 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	RFS30TZ6SGC13

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247GE
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Speed	Operating Temperature - Junction	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Rohm Semiconductor RFS30TZ6SGC13	35 ns	5 µA	Standard	2.3 V	TO-247-2	TO-247GE	200 mA 500 ns	175 °C	30 A	650 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 30A Through Hole TO-247GE

Technical documentation and resources