Discrete Semiconductor Products

SISH103DN-T1-GE3

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MOSFET, P-CH, -30V, 54A, POWERPAK 1212 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, P-CH, -30V, 54A, POWERPAK 1212 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SISH103DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	16 A, 54 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	2540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	41.6 W, 3.67 W
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SISH103DN-T1-GE3	30 V	PowerPAK® 1212-8SH	Surface Mount	25 V	2540 pF	PowerPAK® 1212-8SH	MOSFET (Metal Oxide)	3.67 W 41.6 W	16 A 54 A	-55 °C	150 °C	P-Channel	72 nC	4.5 V 10 V	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 16A (Ta), 54A (Tc) 3.67W (Ta), 41.6W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources