Discrete Semiconductor Products

SIZ720DT-T1-GE3

LTB

MOSFET 2N-CH 20V 16A 6POWERPAIR

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 16A 6POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ720DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	825 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerPair™
Power - Max [Max]	48 W
Power - Max [Min]	27 W
Rds On (Max) @ Id, Vgs	8.7 mOhm
Supplier Device Package	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Min]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Feature	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division SIZ720DT-T1-GE3	-55 °C	150 °C	8.7 mOhm	2 N-Channel (Half Bridge)	27 W	48 W	23 nC	825 pF	Surface Mount	Logic Level Gate	6-PowerPair™	20 V	2 V	MOSFET (Metal Oxide)	16 A	6-PowerPair™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 16A 27W, 48W Surface Mount 6-PowerPair™

Technical documentation and resources