
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | KSE2955TTU |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 2 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 600 mW |
| Supplier Device Package | TO-220-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 8 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
KSE29 Series
Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 600 mW Through Hole TO-220-3
Documents
Technical documentation and resources