Specification	CPH6355-TL-W

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	172 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	169 mOhm
Supplier Device Package	6-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

CPH6355 Series

Single P-Channel Power MOSFET, -30V, -3A, 169mΩ

Part	FET Type	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
ON Semiconductor CPH6355-TL-W	P-Channel	20 V	SOT-23-6 Thin TSOT-23-6	3 A	MOSFET (Metal Oxide)	30 V	4 V	10 V	2.6 V	169 mOhm	6-CPH	172 pF	150 °C	3.9 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

CPH6355 is a Power MOSFET, -30V, 169mΩ, -3A, Single P-Channel for General-Purpose Switching Device Application.