
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AS4C16M16MSB-6BIN |
|---|---|
| Access Time | 5.5 ns |
| Clock Frequency | 166 MHz |
| Memory Depth | 16 M |
| Memory Format | DRAM |
| Memory Interface (Type) | LVCMOS |
| Memory Size | 256 Mbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 54-TFBGA |
| Package Length | 8 mm |
| Package Name | 54-FBGA |
| Package Width | 8 mm |
| Technology | SDRAM - Mobile SDRAM |
| Voltage - Supply (Maximum) | 1.95 V |
| Voltage - Supply (Minimum) | 1.7 V |
| Write Cycle Time - Page | 15 ns |
| Write Cycle Time - Word | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 10.75 | <2d |
| 10 | $ 9.99 | |||
| 25 | $ 9.68 | |||
| 50 | $ 9.45 | |||
| 100 | $ 9.22 | |||
| 319 | $ 8.84 | |||
| 638 | $ 8.62 | |||
CAD
3D models and CAD resources for this part
Description
General part information
AS4C16 Series
SDRAM - Mobile SDRAM Memory IC 256Mbit LVCMOS 166 MHz 5.5 ns 54-FBGA (8x8)
Documents
Technical documentation and resources
No documents available