Discrete Semiconductor Products

PSMP050N10NS2_T0_00601

Active

100V/ 5MOHM/ LOW FOM MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

100V/ 5MOHM/ LOW FOM MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PSMP050N10NS2_T0_00601

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3910 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	138 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-220AB-L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case
Panjit International Inc. PSMP050N10NS2_T0_00601	3910 pF	MOSFET (Metal Oxide)	3.8 V	138 W	TO-220AB-L	N-Channel	150 °C	-55 °C	100 V	20 V	5 mOhm	53 nC	120 A	6 V 10 V	Through Hole	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 120A (Tc) 138W (Tc) Through Hole TO-220AB-L

Technical documentation and resources