Discrete Semiconductor Products

BD3796STU

Obsolete

TRANS NPN 80V 2A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 2A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	BD3796STU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	2 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	25 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
ON Semiconductor BD3796STU	NPN	25 W	2 A	Through Hole	1 V	2 µA	TO-126-3 TO-225AA	80 V	150 °C	40	TO-126-3
ON Semiconductor BD37925STU	NPN	25 W	2 A	Through Hole	1 V	2 µA	TO-126-3 TO-225AA	80 V	150 °C	150	TO-126-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 2 A 25 W Through Hole TO-126-3

Technical documentation and resources