Specification	CNY172SM

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	125 %
Current Transfer Ratio (Min) [Min]	63 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Package / Case	6-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]	4 µs
Rise / Fall Time (Typ) [custom]	3.5 µs
Supplier Device Package	6-SMD
Turn On / Turn Off Time (Typ)	3 µs, 2 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	70 V

CNY172M Series

6-Pin DIP High BV<sub>CEO </sub>Phototransistor Output Optocoupler

Part	Current - Output / Channel	Mounting Type	Turn On / Turn Off Time (Typ)	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Number of Channels	Current Transfer Ratio (Max)	Current Transfer Ratio (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Current - DC Forward (If) (Max) [Max]	Voltage - Output (Max) [Max]	Package / Case	Vce Saturation (Max) [Max]	Voltage - Isolation	Package / Case	Package / Case	Package / Case
ON Semiconductor CNY1723SD	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	1 µs	2 µs	100 °C	-55 °C	DC	100 mA	70 V	6-SMD Gull Wing	300 mV	5300 Vrms
ON Semiconductor CNY172SVM	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-SMD Gull Wing	400 mV	4170 Vrms
ON Semiconductor CNY172SD	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	1 µs	2 µs	100 °C	-55 °C	DC	100 mA	70 V	6-SMD Gull Wing	300 mV	5300 Vrms
ON Semiconductor CNY172SR2M	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-SMD Gull Wing	400 mV	4170 Vrms
ON Semiconductor CNY172SR2M	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-SMD Gull Wing	400 mV	4170 Vrms
ON Semiconductor CNY172M	50 mA	Through Hole	2 µs 3 µs	1.35 V	6-DIP	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-DIP	400 mV	4170 Vrms	0.3 in	7.62 mm
ON Semiconductor CNY172	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	1 µs	2 µs	100 °C	-55 °C	DC	100 mA	70 V	6-SMD Gull Wing	300 mV	5300 Vrms
ON Semiconductor CNY172SR2VM	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-SMD Gull Wing	400 mV	4170 Vrms
ON Semiconductor CNY172W	50 mA	Through Hole	2 µs 3 µs	1.35 V	6-DIP	1	125 %	63 %	1 µs	2 µs	100 °C	-55 °C	DC	100 mA	70 V	6-DIP	300 mV	5300 Vrms		10.16 mm	10.16 mm
ON Semiconductor CNY172SM	50 mA	Surface Mount	2 µs 3 µs	1.35 V	6-SMD	1	125 %	63 %	4 µs	3.5 µs	100 °C	-40 °C	DC	60 mA	70 V	6-SMD Gull Wing	400 mV	4170 Vrms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1207	$ 0.25
		1685	$ 0.19
ON Semiconductor	N/A	1	$ 0.19

Description

General part information

CNY172M Series

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Documents

Technical documentation and resources

Package Drawing-646BY-PDIP6 8.51x6.35, 2.54P

Package Drawing