Discrete Semiconductor Products

VS-15EWH06FNTR-M3

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DIODE GEN PURP 600V 15A DPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 15A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-15EWH06FNTR-M3

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	36 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-252AA (DPAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-15EWH06FNTRR-M3	50 µA	Surface Mount	15 A	36 ns	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns	Standard	175 ░C	-65 C	600 V	2.1 V
Vishay General Semiconductor - Diodes Division VS-15EWH06FNTR-M3	50 µA	Surface Mount	15 A	36 ns	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns	Standard	175 ░C	-65 C	600 V	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 15A Surface Mount TO-252AA (DPAK)

Technical documentation and resources