Specification	EMH25FHAT2R

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	EMT6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV

EMH25 Series

Part	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type	Package / Case	Resistor - Base (R1)	Transistor Type	Grade	Qualification	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor EMH25FHAT2R	300 mV	250 MHz	47000 Ohms	100 mA	80	EMT6	Surface Mount	SOT-563 SOT-666	4.7 kOhms	2 NPN - Pre-Biased (Dual)	Automotive	AEC-Q101
Rohm Semiconductor EMH25T2R	300 mV	250 MHz	47000 Ohms	100 mA	80	EMT6	Surface Mount	SOT-563 SOT-666	4.7 kOhms	2 NPN - Pre-Biased (Dual)			500 nA	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6