EFC4C002NLTDG

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWER MOSFET FOR 3-CELLS LITHIUM-ION BATTERY PROTECTION, 30 V, 30 A, 2.6 MΩ

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Discrete Semiconductor Products

EFC4C002NLTDG

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWER MOSFET FOR 3-CELLS LITHIUM-ION BATTERY PROTECTION, 30 V, 30 A, 2.6 MΩ

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EFC4C002NLTDG

Configuration	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-XFBGA, WLCSP
Power - Max [Max]	2.6 W
Supplier Device Package	8-WLCSP (6x2.5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

EFC4C002NL Series

Dual N-Channel Power MOSFET for 3-Cells Lithium-ion Battery Protection, 30 V, 30 A, 2.6 mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Configuration	Package / Case	Power - Max [Max]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Operating Temperature
ON Semiconductor EFC4C002NLTDG	45 nC	8-WLCSP (6x2.5)	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	8-XFBGA WLCSP	2.6 W	2.2 V	Surface Mount	6200 pF	Logic Level Gate	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

EFC4C002NL Series

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications of DRONE or NOTEBOOK PC.

Documents

Technical documentation and resources