Discrete Semiconductor Products

2SB1143T

Obsolete

TRANS PNP 50V 4A TO126ML

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Discrete Semiconductor Products

Obsolete

TRANS PNP 50V 4A TO126ML

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1143T

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.5 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Package / Case
ON Semiconductor 2SB1143T	1 µA	700 mV	200	150 MHz	Through Hole	50 V	150 °C	4 A	1.5 W	PNP	TO-126-3 TO-225AA
ON Semiconductor 2SB1143S	1 µA	700 mV	140 hFE	150 MHz	Through Hole	50 V	150 °C	4 A	1.5 W	PNP	TO-126-3 TO-225AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 4 A 150MHz 1.5 W Through Hole TO-126ML

Technical documentation and resources