Discrete Semiconductor Products

VS-ETF150Y65U

Obsolete

IGBT MOD 650V 142A EMIPAK-2B

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Discrete Semiconductor Products

Obsolete

IGBT MOD 650V 142A EMIPAK-2B

Technical Specifications

Parameters and characteristics for this part

Specification	VS-ETF150Y65U

Configuration	Three Level Inverter
Current - Collector (Ic) (Max) [Max]	142 A
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	6.6 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	175 °C
Package / Case	EMIPAK-2B
Power - Max [Max]	417 W
Supplier Device Package	EMIPAK-2B
Vce(on) (Max) @ Vge, Ic	2.06 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Input Capacitance (Cies) @ Vce	Input	Current - Collector (Ic) (Max) [Max]	Configuration	Operating Temperature	Vce(on) (Max) @ Vge, Ic	Mounting Type	Supplier Device Package	Power - Max [Max]	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Package / Case	IGBT Type
Vishay General Semiconductor - Diodes Division VS-ETF150Y65U	6.6 nF	Standard	142 A	Three Level Inverter	175 °C	2.06 V	Chassis Mount	EMIPAK-2B	417 W		650 V	EMIPAK-2B	Trench

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Three Level Inverter 650 V 142 A 417 W Chassis Mount EMIPAK-2B

Technical documentation and resources