Discrete Semiconductor Products

PH6030AL,115

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MOSFET N-CH 30V 79A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 79A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH6030AL,115

Current - Continuous Drain (Id) @ 25°C	79 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1425 pF
Mounting Type	Surface Mount
Package / Case	SOT-669, SC-100
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PH6030AL,115	Surface Mount	MOSFET (Metal Oxide)	30 V	SC-100 SOT-669	1425 pF	24 nC	LFPAK56 Power-SO8	6 mOhm	79 A	N-Channel	2.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 79A (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available