Discrete Semiconductor Products

EMX2T2R

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Rohm Semiconductor

TRANS GP BJT NPN 50V 0.15A 6-PIN EMT T/R

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Discrete Semiconductor Products

EMX2T2R

Active

Rohm Semiconductor

TRANS GP BJT NPN 50V 0.15A 6-PIN EMT T/R

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EMX2T2R

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Supplier Device Package	EMT6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

EMX2T2 Series

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
Rohm Semiconductor EMX2T2R	2 NPN (Dual)	150 mA	Surface Mount	SOT-563 SOT-666	100 nA	120	50 V	180 MHz	150 °C	EMT6	400 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.53

Description

General part information

EMX2T2 Series

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.· Ultra-compact complex bipolar transistor· For pre-amplifier· Small Surface Mount Package· Pb Free/RoHS Compliant

Documents

Technical documentation and resources

No documents available