Discrete Semiconductor Products

SGL41-50-E3/97

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DIODE SCHOTTKY 50V 1A GL41

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Discrete Semiconductor Products

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DIODE SCHOTTKY 50V 1A GL41

Technical Specifications

Parameters and characteristics for this part

Specification	SGL41-50-E3/97

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-213AB, MELF
Speed	200 mA, 500 ns
Supplier Device Package	DO-213AB (GL41)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division SGL41-60-E3/96	DO-213AB MELF	500 µA	700 mV	1 A	60 V	Schottky	200 mA 500 ns	Surface Mount	DO-213AB (GL41)	150 °C	-55 °C	80 pF
Vishay General Semiconductor - Diodes Division SGL41-40-E3/96	DO-213AB MELF	500 µA	500 mV	1 A	40 V	Schottky	200 mA 500 ns	Surface Mount	DO-213AB (GL41)	125 °C	-55 °C	110 pF
Vishay General Semiconductor - Diodes Division SGL41-50-E3/97	DO-213AB MELF	500 µA	700 mV	1 A	50 V	Schottky	200 mA 500 ns	Surface Mount	DO-213AB (GL41)	150 °C	-55 °C	80 pF
Vishay General Semiconductor - Diodes Division SGL41-40HE3/96	DO-213AB MELF	500 µA	500 mV	1 A	40 V	Schottky	200 mA 500 ns	Surface Mount	DO-213AB (GL41)	125 °C	-55 °C	110 pF
Vishay General Semiconductor - Diodes Division SGL41-30-E3/97	DO-213AB MELF	500 µA	500 mV	1 A	30 V	Schottky	200 mA 500 ns	Surface Mount	DO-213AB (GL41)	125 °C	-55 °C	110 pF

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General part information

Diode 50 V 1A Surface Mount DO-213AB (GL41)

Technical documentation and resources