Discrete Semiconductor Products

CWDM305N TR13 PBFREE

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MOSFET N-CH 30V 5.8A 8SOIC

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Discrete Semiconductor Products

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MOSFET N-CH 30V 5.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	CWDM305N TR13 PBFREE

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Package / Case	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Central Semiconductor Corp CWDM305N TR13 PBFREE	MOSFET (Metal Oxide)	Surface Mount	30 V	5.8 A	6.3 nC	20 V	3 V	150 °C	-55 °C	30 mOhm	8-SOIC	560 pF	N-Channel	0.154 in	8-SOIC	3.9 mm	2 W	5 V 10 V

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General part information

N-Channel 30 V 5.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

Technical documentation and resources