Discrete Semiconductor Products

PMXB360ENEAZ

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TRANS MOSFET N-CH 80V 1.1A AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 80V 1.1A AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PMXB360ENEAZ

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XDFN Exposed Pad
Power Dissipation (Max)	400 mW, 6.25 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	DFN1010D-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Drain to Source Voltage (Vdss)	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PMXB360ENEAZ	4.5 nC	N-Channel	MOSFET (Metal Oxide)	6.25 W 400 mW	20 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V	AEC-Q101	80 V	DFN1010D-3	Automotive	1.1 A	2.7 V	130 pF	3-XDFN Exposed Pad	450 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3

Technical documentation and resources