Discrete Semiconductor Products

SDURB830

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DIODE GEN PURP 300V 8A D2PAK

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Discrete Semiconductor Products

Active

DIODE GEN PURP 300V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SDURB830

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
SMC Diode Solutions SDURB830	45 ns	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.3 V	8 A	10 µA	Standard	D2PAK	200 mA 500 ns	150 °C	-55 °C	300 V

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General part information

Diode 300 V 8A Surface Mount D2PAK

Technical documentation and resources