Discrete Semiconductor Products

GBL08-E3/51

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BRIDGE RECT 1PHASE 800V 3A GBL

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Discrete Semiconductor Products

Unknown

BRIDGE RECT 1PHASE 800V 3A GBL

Technical Specifications

Parameters and characteristics for this part

Specification	GBL08-E3/51

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBL, 4-SIP
Supplier Device Package	GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Current - Average Rectified (Io)	Diode Type	Mounting Type
Vishay General Semiconductor - Diodes Division GBL08-M3/51	1 V	-55 °C	150 °C	800 V	4-SIP GBL	10 µA	GBL	Standard	4 A	Single Phase	Through Hole
Vishay General Semiconductor - Diodes Division GBL08-E3/51	1 V	-55 °C	150 °C	800 V	4-SIP GBL	10 µA	GBL	Standard	3 A	Single Phase	Through Hole
Vishay General Semiconductor - Diodes Division GBL08-E3/45	1 V	-55 °C	150 °C	800 V	4-SIP GBL	10 µA	GBL	Standard	3 A	Single Phase	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBL

Technical documentation and resources