Discrete Semiconductor Products

UGF18DCTHE3_A/P

Obsolete

DIODE ARRAY GP 200V 18A ITO220AB

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 200V 18A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	UGF18DCTHE3_A/P

Current - Average Rectified (Io) (per Diode)	18 A
Current - Reverse Leakage @ Vr	10 ÁA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Technology	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Grade	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Qualification
Vishay General Semiconductor - Diodes Division UGF18DCTHE3_A/P	Standard	18 A	10 ÁA	200 mA 500 ns	Through Hole	TO-220-3 Full Pack Isolated Tab	150 °C	-65 C	200 V	1 Pair Common Cathode	Automotive	30 ns	ITO-220AB	1.1 V	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode Array 1 Pair Common Cathode 200 V 18A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources