Discrete Semiconductor Products

GBPC5010W-G

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BRIDGE RECT 1P 1KV 50A GBPC-W

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 1KV 50A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC5010W-G

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	10 çA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-W
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Diode Type	Package / Case	Package / Case
Comchip Technology GBPC5010W-G	1 kV	GBPC-W	Standard	50 A	10 çA	1.1 V	150 °C	-55 °C	Through Hole	4-Square GBPC-W	Single Phase
Comchip Technology GBPC5010-G	1 kV	GBPC	Standard	50 A	10 çA	1.1 V	150 °C	-55 °C	QC Terminal		Single Phase	4-Square	GBPC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBPC-W

Technical documentation and resources

No documents available