Specification	NTBLS1D7N10MCTXG

Current - Continuous Drain (Id) @ 25°C	29 A, 272 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds	9200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	3.4 W, 295 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTBLS1D7N10MC Series

MOSFET, Power, Single N-Channel, 100V, TOLL Package

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTBLS1D7N10MCTXG	8-HPSOF	4 V	115 nC	29 A 272 A	10 V	1.8 mOhm	20 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 V	N-Channel	3.4 W 295 W	8-PowerSFN	Surface Mount	9200 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, Single N-Channel, 100V, 1.8mΩ, 272A, TOLL Package

Technical documentation and resources