Discrete Semiconductor Products

PJQ4401P_R2_00001

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30V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4401P_R2_00001

Current - Continuous Drain (Id) @ 25°C	50 A, 10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3228 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 60 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Qualification	Grade
Panjit International Inc. PJQ4401P_R2_00001	MOSFET (Metal Oxide)	150 °C	-55 °C	8-PowerVDFN	27 nC	3228 pF	20 V	DFN3333-8	Surface Mount	4.5 V 10 V	2.5 V	P-Channel	2 W 60 W	30 V	10 A 50 A	8.5 mOhm
Panjit International Inc. PJQ4401P-AU_R2_000A1	MOSFET (Metal Oxide)	150 °C	-55 °C	8-PowerVDFN	27 nC	3228 pF	20 V	DFN3333-8	Surface Mount	4.5 V 10 V	2.5 V	P-Channel	2 W 60 W	30 V	10 A 50 A	8.5 mOhm	AEC-Q101	Automotive

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General part information

P-Channel 30 V 10A (Ta), 50A (Tc) 2W (Ta), 60W (Tc) Surface Mount DFN3333-8

Technical documentation and resources