Discrete Semiconductor Products

APT8DQ60KCTG

Obsolete

DIODE ARRAY GP 600V 8A TO220

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 600V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT8DQ60KCTG

Current - Average Rectified (Io) (per Diode)	8 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	19 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220 [K]
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	8 A, 2.4 V

Part	Current - Reverse Leakage @ Vr	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Package / Case
Microsemi Corporation APT8DQ60KCTG	25 µA	1 Pair Common Cathode	600 V	200 mA 500 ns	2.4 V 8 A	TO-220 [K]	8 A	Through Hole	Standard	175 ░C	-55 °C	19 ns	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode Array 1 Pair Common Cathode 600 V 8A Through Hole TO-220-3

Technical documentation and resources