Specification	FMB200

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

FMB200 Series

PNP Multi-Chip General Purpose Amplifier

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FMB200	45 V	500 mA	SOT-23-6 Thin TSOT-23-6	2 PNP (Dual)	Surface Mount	50 nA	SuperSOT™-6	300 MHz	100	400 mV	700 mW	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.