Discrete Semiconductor Products

CXT5401 TR PBFREE

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TRANS GP BJT PNP 150V 0.6A 1200MW 4-PIN(3+TAB) SOT-89 T/R

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Discrete Semiconductor Products

Active

TRANS GP BJT PNP 150V 0.6A 1200MW 4-PIN(3+TAB) SOT-89 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	CXT5401 TR PBFREE

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-243AA
Power - Max [Max]	1.2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	150 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Central Semiconductor Corp CXT5401 TR PBFREE	60	Surface Mount	500 mV	TO-243AA	1.2 W	150 V	PNP	300 MHz	150 °C	-65 °C	50 nA	600 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 1.2 W Surface Mount SOT-89

Technical documentation and resources