Discrete Semiconductor Products
RCJ451N20TL
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 211W, TO-263S, 3PIN ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RCJ451N20TL
ActiveRohm Semiconductor
MOSFET, N-CH, 200V, 211W, TO-263S, 3PIN ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | RCJ451N20TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 1.56 W, 211 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | TO-263S |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RCJ451N20 Series
RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources