Discrete Semiconductor Products
HN4A56JU(TE85L,F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT USV PLN TRANSISTOR PD=300MW F=1MHZ
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Discrete Semiconductor Products
HN4A56JU(TE85L,F)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS - BJT USV PLN TRANSISTOR PD=300MW F=1MHZ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HN4A56JU(TE85L,F) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 60 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-353, SC-70-5, 5-TSSOP |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | USV |
| Transistor Type | 2 PNP (Dual) |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Frequency - Transition | Supplier Device Package | Power - Max [Max] | Operating Temperature | Mounting Type | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 120 | 5-TSSOP SC-70-5 SOT-353 | 60 MHz | USV | 200 mW | 150 °C | Surface Mount | 2 PNP (Dual) | 50 V | 150 mA | 100 nA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HN4A56 Series
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 60MHz 200mW Surface Mount USV
Documents
Technical documentation and resources
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