Specification	NTD80N02T4

Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs [Max]	5.8 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTD80N02 Series

Power MOSFET 24V 80A 5.8 Single N-Channel DPAK

Part	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id
ON Semiconductor NTD80N02G	5.8 mOhm	-55 °C	150 °C	N-Channel	20 V	2600 pF	4.5 V 10 V	24 V	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	42 nC	Surface Mount	MOSFET (Metal Oxide)	75 W	3 V
ON Semiconductor NTD80N02T4	5.8 mOhm	-55 °C	150 °C	N-Channel	20 V	2600 pF	4.5 V 10 V	24 V	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	42 nC	Surface Mount	MOSFET (Metal Oxide)	75 W	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N Channel DPAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.