Discrete Semiconductor Products

PJC7409_R1_00001

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20V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7409_R1_00001

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	38 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type
Panjit International Inc. PJC7409_R1_00001	38 pF	1.2 V 4.5 V	SOT-323	P-Channel	350 mW	10 V	1.2 Ohm	1 V	500 mA	20 V	SC-70 SOT-323	1.4 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount

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General part information

P-Channel 20 V 500mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources