Discrete Semiconductor Products

PJT7807_R1_00001

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MOSFETS 20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 20V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7807_R1_00001

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	38 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Power - Max [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Configuration	Technology
Panjit International Inc. PJT7807_R1_00001	38 pF	Surface Mount	350 mW	6-TSSOP SC-88 SOT-363	SOT-363	1.2 Ohm	150 °C	-55 °C	20 V	1.4 nC	500 mA	1 V	2 P-Channel (Dual)	MOSFET (Metal Oxide)

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General part information

Mosfet Array 20V 500mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources