Discrete Semiconductor Products

PMV280ENEAR

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MOSFET N-CH 100V 1.1A TO236AB

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Discrete Semiconductor Products

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MOSFET N-CH 100V 1.1A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV280ENEAR

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	580 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	385 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	FET Type
Freescale Semiconductor - NXP PMV280ENEAR	Automotive	4.5 V 10 V	190 pF	20 V	AEC-Q101	2.7 V	385 mOhm	6.8 nC	1.1 A	580 mW	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	TO-236AB	Surface Mount	100 V	N-Channel

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General part information

N-Channel 100 V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB

Technical documentation and resources