Specification	2SC5415AE-TD-E

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90
Frequency - Transition	6.7 GHz
Gain	9 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.1 dB
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	800 mW
Supplier Device Package	PCP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

2SC5415A Series

RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

Part	Operating Temperature	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Gain	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case
ON Semiconductor 2SC5415AF-TD-E	150 °C	NPN	6.7 GHz	12 V	9 dBi	Surface Mount	90	1.1 dB	800 mW	100 mA	PCP	TO-243AA
ON Semiconductor 2SC5415AE-TD-E	150 °C	NPN	6.7 GHz	12 V	9 dBi	Surface Mount	90	1.1 dB	800 mW	100 mA	PCP	TO-243AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SC5415A is RF Transistor, 12 V, 100 mA, fT= 6.7 GHz, NPN Single PCP for High-Frequency Low-Noise Amplifier Applications.