Discrete Semiconductor Products

MCT15P02-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCT15P02-TP

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Micro Commercial Components MCT15P02-TP	10 V	SOT-223	900 mV	15 A	1600 pF	-55 °C	150 °C	20 V	TO-261-4 TO-261AA	25 mOhm	1.8 V 4.5 V	Surface Mount	P-Channel	MOSFET (Metal Oxide)	18.6 nC	1.25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2500	$ 0.16

General part information

P-Channel 20 V 15A 1.25W Surface Mount SOT-223

Technical documentation and resources