Discrete Semiconductor Products
RS1E260ATTB1
ActiveRohm Semiconductor
MOSFET, P-CH, 30V, 80A, 150DEG C, 40W ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RS1E260ATTB1
ActiveRohm Semiconductor
MOSFET, P-CH, 30V, 80A, 150DEG C, 40W ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS1E260ATTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80 A, 26 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 175 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7850 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RS1E260AT Series
RS1E260AT is the high reliability transistor, suitable for switching applications.
Documents
Technical documentation and resources