Discrete Semiconductor Products

BAS28,235

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DIODE ARRAY GP 75V 215MA SOT143B

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Discrete Semiconductor Products

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DIODE ARRAY GP 75V 215MA SOT143B

Technical Specifications

Parameters and characteristics for this part

Specification	BAS28,235

Current - Average Rectified (Io) (per Diode)	215 mA
Current - Reverse Leakage	1 µA
Diode Configuration	Independent
Diode Count	2
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Package / Case	TO-253AA, TO-253-4
Package Name	SOT-143B
Reverse Recovery Time (trr)	4 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	75 V
Voltage - Forward (Vf) (Max)	1.25 V

Part	Technology	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - DC Reverse (Vr) (Max)	Mounting Type	Current - Reverse Leakage	Package / Case	Diode Count	Diode Configuration	Package Name	Operating Temperature - Junction (Max)	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)
NXP USA Inc. BAS28,215	Standard	500 ns	200 mA	75 V	Surface Mount	1 µA	TO-253-4 TO-253AA	2	Independent	SOT-143B	150 °C	1.25 V	215 mA	4 ns
NXP USA Inc. BAS28,235	Standard	500 ns	200 mA	75 V	Surface Mount	1 µA	TO-253-4 TO-253AA	2	Independent	SOT-143B	150 °C	1.25 V	215 mA	4 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode Array 2 Independent 75 V 215mA (DC) Surface Mount TO-253-4, TO-253AA

Technical documentation and resources

No documents available