Discrete Semiconductor Products

MCAC35N10Y-TP

Obsolete

MOSFET N-CH 100 35A DFN5060

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100 35A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC35N10Y-TP

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1223 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs [Max]	17.1 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Power Dissipation (Max) [Max]
Micro Commercial Components MCAC35N10Y-TP	4 V	1223 pF	100 V	-55 °C	150 °C	25 nC	Surface Mount	17.1 mOhm	20 V	N-Channel	DFN5060	35 A	MOSFET (Metal Oxide)	8-PowerTDFN	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 35A (Tj) 35W Surface Mount DFN5060

Technical documentation and resources