Discrete Semiconductor Products

SI4134DY-T1-E3

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MOSFET N-CH 30V 14A 8SO

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 14A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4134DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	846 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4134DY-T1-E3	20 V	2.5 V	-55 °C	150 °C	Surface Mount	N-Channel	30 V	14 mOhm	8-SOIC	10 V	14 A	846 pF	MOSFET (Metal Oxide)	2.5 W 5 W	8-SOIC	3.9 mm	0.154 in	23 nC

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General part information

N-Channel 30 V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources