Discrete Semiconductor Products

SI3443CDV-T1-GE3

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MOSFET P-CH 20V 5.97A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CH 20V 5.97A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3443CDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.97 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 3.2 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI3443CDV-T1-GE3	5.97 A	12.4 nC	2.5 V 4.5 V	2 W 3.2 W	6-TSOP	SOT-23-6 Thin TSOT-23-6	610 pF	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	P-Channel	Surface Mount	12 V	60 mOhm	1.5 V
Vishay General Semiconductor - Diodes Division SI3443BDV-T1-BE3	3.6 A		2.5 V 4.5 V	1.1 W	6-TSOP	SOT-23-6 Thin TSOT-23-6		MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	P-Channel	Surface Mount	12 V	60 mOhm	1.4 V	9 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

Technical documentation and resources