Discrete Semiconductor Products

2SK3161STR-E

LTB

NCH SINGLE POWER MOSFET 200V 15A 115MOHM LDPAK(S)-(1)/TO-263

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Discrete Semiconductor Products

LTB

NCH SINGLE POWER MOSFET 200V 15A 115MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3161STR-E

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max) [Max]	75 W
Rds On (Max) @ Id, Vgs	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Nch Single Power Mosfet 200V 15A 115Mohm LDPAK(S)-(1)/To-263

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation 2SK3161STR-E	200 V	2.5 V	15 A	75 W	20 V	SC-83	MOSFET (Metal Oxide)	N-Channel	4 V	Surface Mount	125 mOhm	150 °C	1600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.29

General part information

The 2SK3161S is a Nch Single Power Mosfet 200V 15A 115Mohm LDPAK(S)-(1)/To-263.

Technical documentation and resources