onsemi-CPH3216-TL-E GP BJT Trans GP BJT NPN 50V 1A 900mW 3-Pin CPH T/R

Discrete Semiconductor Products

CPH3122-TL-E

Obsolete

ON Semiconductor

BIPOLAR TRANSISTOR, -30V, -3A, LOW VCE(SAT) PNP SINGLE CPH3

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-318BA-CPH3

Discrete Semiconductor Products

CPH3122-TL-E

Obsolete

ON Semiconductor

BIPOLAR TRANSISTOR, -30V, -3A, LOW VCE(SAT) PNP SINGLE CPH3

Deep-Dive with AI

DocumentsDatasheet Package Drawing-318BA-CPH3

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CPH3122-TL-E

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	420 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	900 mW
Supplier Device Package	3-CPH
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	180 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

CPH3122 Series

Bipolar Transistor, -30V, -3A, Low VCE(sat) PNP Single CPH3

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Transistor Type
ON Semiconductor CPH3122-TL-E	180 mV	30 V	200	150 °C	3-CPH	Surface Mount	3 A	900 mW	SC-59 SOT-23-3 TO-236-3	420 MHz	100 nA	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2659	$ 0.11

Description

General part information

CPH3122 Series

CPH3122 is Bipolar Transistor, -30V, -3A, Low VCE(sat) PNP Single CPH3 for DC-DC converter applications, relay drivers, lamp drivers, motor drivers and flash. Their MBIT structure provides high current capacitance, low collector-to-emitter saturation voltage and high-speed switching performance.